Spotlight
Plasma-enhanced atomic layer deposition of HfO2 on monolayer, bilayer, and trilayer MoS2 for the integration of high-k dielectrics in 2D devices is demonstrated and the role of surface and subsurface sulfur vacancies is explored.
Plasma-enhanced atomic layer deposition of HfO2 on monolayer, bilayer, and trilayer MoS2 for the integration of high-k dielectrics in 2D devices is demonstrated and the role of surface and subsurface sulfur vacancies is explored.